Overview and research status of graphene photodetectors

Tech 2023-05-23 00:28:16 Source: Network

Application prospects of graphene photodetectorsGraphene has characteristics such as ultra-high carrier mobility, wide spectral absorption, and extremely high thermal conductivity,These excellent properties lay the foundation for the preparation of photodetectors with high sensitivity and wide spectral response.However, due to the inherent zero bandgap energy band structure of graphene, its light absorption ability is weak, and there are also shortcomings such as small gain mechanism and fast carrier recombination rate, which limit the application of pure graphene in photodetectors

Application prospects of graphene photodetectors

Graphene has characteristics such as ultra-high carrier mobility, wide spectral absorption, and extremely high thermal conductivity,These excellent properties lay the foundation for the preparation of photodetectors with high sensitivity and wide spectral response.

However, due to the inherent zero bandgap energy band structure of graphene, its light absorption ability is weak, and there are also shortcomings such as small gain mechanism and fast carrier recombination rate, which limit the application of pure graphene in photodetectors.

Therefore,Optimize the device structure of graphene based photodetectors and improve their light absorption efficiency to improve their detection ratebecomeImportant research directions

The core working principle of graphene photodetectors is to convert incident light signals into easily detectable electrical signals. The physical mechanisms of photoelectric conversion include the following:Photovoltaic effect, photothermoelectric effect, photoinduced gate voltage effect, radiative heat effect

Photovoltaic effect

Photovoltaic effectand

1.9 Photovoltaic effect

When applying gate voltage to the device, a large dark current is generated, which increases the static power consumption of the device

Photothermoelectric effect

and

Photothermoelectric effect

Photoinduced gate voltage effect

Under lighting conditions,The carrier concentration of graphene will change, and the conductivity will also change with the change of carrier concentration- 1.10 Photoinduced gate voltage effect

Radiative heat effect

1.11 Radiative heat effect

Radiative heat effectPhotothermoelectric effect: Radiative heat effect; Photothermoelectric effectandRadiative heat effect

Research status of graphene photodetectors

Although graphene has high carrier mobility, wide spectral absorption range, and excellent conductivity

In order to solve this problem, researchers have come up with many improvement plans, includingChange the structure of pure graphene devices, composite graphene with metal oxides, two-dimensional layered semiconductor materials, organic semiconductor materials, or perovskite quantum dots to form composite heterojunctions

Pure graphene photodetector

Pure graphene photodetector

In response to these issues, researchers have come up with a series of optimization plans,

The relevant research cases are listed as follows:

2009 Xia Pure graphene photodetector-

2010 Mueller 1.12 (Pb Ti)

and-

1550 nm 6.1 mA/W

,Konstantators 2012 -

1.13(a)and 21 mA/W

2013 Dirk Englund 1.13(b) 0.1 A/W

2015 Luo / 1.13(c)

1.5 A/W 106 101 Jones

(b) Graphene/two-dimensional layered material composite photodetector

Additionally,

2015 ,Mudd /InSe 1.14(a) 4X103A/W 1 ms 10 ms

InSe InSe InSe

Vabbina /MoS, 1.14(b) 400-1500 nm 590 nm 0.52 A/W

1440 nm 1.26 A/W

2020 Gao /MoS2/ 1.14(c) 405-2000 nm

MOS2 532 nm 2000 nm 414 A/W 376 A/W 3.2X1010 Jones 2.9X 1010 Jones

The high responsiveness of graphite/MoS2 composite photodetectors can be attributed to: MoS2and

In 2017, the Bao Bridge research group compounded MTe2 with graphene to produce a graphene/MoTe2 photodetector. The structure diagram of the device is shown in Figure 1.14 (d). Through research, it is concluded that:,MoTe2

MoTe2 (400-1064 nm) 970 A/W 4.69X 108 1.55X 1011Jones

(c)/

Research shows,In 2016, Tan's research group reported on a method based onAt (C4H9NH3) 2PbBr4/ 1.15(a)

10-10A 103/:, 2100 A/W

In 2017, Xie Chao and others proposed a new approach, attempting toCH3NH3PbI3-xClx P3HT

The device structure is shown in Figure 1.15 (b), as the photo generated electron hole pairs can be effectively separated, reducing the probability of photo generated charge carrier recombination, resulting in a large number of electrons being captured in perovskiteCH3NH3PbI3-xClxThe material has a ratio ofCH3NH3PbI3

Based on these factors, the composite heterojunction device has an ultra-high response of 4.3X109A/W and a gain of 1010, which is significantly superior to noneP3HT

In 2020, Zou et al. reported a highly sensitive single crystal perovskite graphene hybrid photodetector with a device structure shown in Figure 1.15 (c)MAPbBr3

3V 532 nm 1017.1 A/W, 2.02X1013 Jones 2.37X 103

Graphene quantum dot composite heterojunction photodetector

(1) Overview of Quantum Dots

(2) Graphene quantum dot composite heterojunction photodetector

andGraphene has extremely high carrier mobility and excellent conductivity, but the thickness of the single atomic layer limits its absorption of light, which is not conducive to its application in detectors

Based on this, researchers are considering combining quantum dots and graphene to form a composite heterojunction device,

2015 D.Spirito CdS /CdS 1.16 (a) 3.4X 104A/W, 1013 Jnes

,and CdS

2017 Gong ZnO and 1.16 (b) Zn , 9.9X 108A/W,3.6X109 1014 Jones

2018 Sun -ZnSe/ZnS - 1.16 (c)

ZnSe/ZnS - 405 nm 103A/W

ZnS ZnSe -

In 2019, Liu et al. reported a graphene/Cu2O quantum dot hybrid photodetector with ultra-high response rate on advanced optical materials. The device structure is shown in Figure 1.16 (d), which is made by placing CuO quantum dots between copper foil and graphene. The device has an ultra-high response of 1010A/W under fw level signal light irradiation, 106A/W

6x108Jones 800 A/W 0.4 ms 0.7 ms

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